- 专利标题: Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
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申请号: US15827852申请日: 2017-11-30
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公开(公告)号: US10276785B2公开(公告)日: 2019-04-30
- 发明人: Yohei Shiokawa , Tomoyuki Sasaki , Tatsuo Shibata
- 申请人: TDK CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2016-235236 20161202
- 主分类号: H01L27/22
- IPC分类号: H01L27/22 ; H01L43/08 ; H01L43/02 ; H01L27/12 ; H01L43/10 ; G11C11/16
摘要:
A spin current magnetization rotational element includes: a magnetization free layer including a synthetic structure consisting of a first ferromagnetic metal layer, a second ferromagnetic metal layer and a first non-magnetic layer sandwiched by the first ferromagnetic metal layer and the second ferromagnetic metal layer; and an antiferromagnetic spin-orbit torque wiring that extends in a second direction intersecting with a first direction that is a lamination direction of the synthetic structure and is joined to the first ferromagnetic metal layer, wherein the spin current magnetization rotational element is configured to change a magnetization direction of the magnetization free layer by applying current to the antiferromagnetic spin-orbit torque wiring.
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