Invention Grant
- Patent Title: Integrated circuit, system for and method of forming an integrated circuit
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Application No.: US15465167Application Date: 2017-03-21
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Publication No.: US10262981B2Publication Date: 2019-04-16
- Inventor: Fong-Yuan Chang , Jyun-Hao Chang , Sheng-Hsiung Chen , Po-Hsiang Huang , Lipen Yuan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L27/02 ; H01L23/522 ; H01L23/528 ; H01L27/118

Abstract:
A method of forming an integrated circuit is disclosed. The method includes generating, by a processor, a layout design of the integrated circuit, outputting the integrated circuit based on the layout design, and removing a portion of a conductive structure of the integrated circuit to form a first conductive structure and a second conductive structure. Generating the layout design includes generating a standard cell layout having a set of conductive feature layout patterns, placing a power layout pattern with the standard cell layout according to at least one design criterion, and extending at least one conductive feature layout pattern of the set of conductive feature layout patterns in at least one direction to a boundary of the power layout pattern. The power layout pattern includes a cut feature layout pattern. The cut feature layout pattern identifies a location of the removed portion of the conductive structure of the integrated circuit.
Public/Granted literature
- US20170317063A1 INTEGRATED CIRCUIT, SYSTEM FOR AND METHOD OF FORMING AN INTEGRATED CIRCUIT Public/Granted day:2017-11-02
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