发明授权
- 专利标题: Overlay mark
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申请号: US16048018申请日: 2018-07-27
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公开(公告)号: US10249570B2公开(公告)日: 2019-04-02
- 发明人: Chen-Yu Chen , Ming-Feng Shieh , Ching-Yu Chang
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: H01L23/544
- IPC分类号: H01L23/544 ; H01L29/06 ; G03F7/20 ; H01L21/302 ; H01L29/78
摘要:
An overlay mark includes a first feature of a plurality of first alignment segments extending along a first direction in a first layer, a second feature of a plurality of second alignment segments extending along a second direction in a second layer over the first layer, and a third feature of a plurality of third alignment segments extending along the first direction and a plurality of fourth alignment segments extending along the second direction in a third layer over the second layer. In a plan view, each first alignment segment of the plurality of first alignment segments is adjacent to a corresponding third alignment segment of the plurality of third alignment segments along the first direction, and each second alignment segment of the plurality of second alignment segments is adjacent to a corresponding forth alignment segment of the plurality of fourth alignment segments along the second direction.
公开/授权文献
- US20180350750A1 OVERLAY MARK 公开/授权日:2018-12-06
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