- 专利标题： Semiconductor device and method for fabricating the same
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申请号： US15290240申请日： 2016-10-11
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公开(公告)号： US10177253B2公开(公告)日： 2019-01-08
- 发明人: Sung-Soo Kim , Gi-Gwan Park , Sang-Koo Kang , Koung-Min Ryu , Jae-Hoon Lee , Tae-Won Ha
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2015-0143541 20151014
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/40 ; H01L29/423 ; H01L29/51
摘要：
A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.
公开/授权文献
- US20170110576A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2017-04-20
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