- 专利标题： MOS devices with non-uniform p-type impurity profile
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申请号： US15450265申请日： 2017-03-06
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公开(公告)号： US10158016B2公开(公告)日： 2018-12-18
- 发明人: Hsueh-Chang Sung , Tsz-Mei Kwok , Kun-Mu Li , Tze-Liang Lee , Chii-Horng Li
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L21/8234 ; H01L27/088 ; H01L29/08 ; H01L29/417 ; H01L29/66 ; H01L21/285 ; H01L21/768 ; H01L21/8238
摘要：
An integrated circuit structure include a semiconductor substrate, a gate stack over the semiconductor substrate, and a recess extending into the semiconductor substrate, wherein the recess is adjacent to the gate stack. A silicon germanium region is disposed in the recess, wherein the silicon germanium region has a first p-type impurity concentration. A silicon cap substantially free from germanium is overlying the silicon germanium region. The silicon cap has a second p-type impurity concentration greater than the first p-type impurity concentration.
公开/授权文献
- US20170179287A1 MOS Devices with Non-Uniform P-type Impurity Profile 公开/授权日：2017-06-22
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