Invention Grant
- Patent Title: Semiconductor device structure
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Application No.: US15867080Application Date: 2018-01-10
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Publication No.: US10157859B2Publication Date: 2018-12-18
- Inventor: Shou-Zen Chang , Chi-Ming Huang , Kai-Chiang Wu , Sen-Kuei Hsu , Hsin-Yu Pan , Han-Ping Pu , Albert Wan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/538 ; H01L25/065 ; H01L25/00
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a first device. The semiconductor device structure includes a conductive element over the first device. The semiconductor device structure includes a first conductive shielding layer between the first device and the conductive element. The first conductive shielding layer has openings, and a maximum width of the opening is less than a wavelength of an energy generated by the first device. The semiconductor device structure includes a second conductive shielding layer under the first device. The first device is between the first conductive shielding layer and the second conductive shielding layer, and the second conductive shielding layer has a plurality of second openings.
Public/Granted literature
- US20180130756A1 SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2018-05-10
Information query
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