A semiconductor memory device includes first and second memory cells, first and second word lines that are connected to the first and second memory cells, respectively, a first transistor connected to one end of the first word line, and second and third transistors respectively connected to first and second ends of the second word line. During a read operation on the first and second memory cells, when the first word line is selected, a first voltage is applied to the second word line, and then a second voltage is applied to the first word line, and when the second word line is selected, the first voltage is applied to the first word line, and then the second voltage is applied to the second word line. The second voltage is applied to the first word line for a longer duration than is applied to the second word line.