发明授权
- 专利标题： Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
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申请号： US15458641申请日： 2017-03-14
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公开(公告)号： US10103319B2公开(公告)日： 2018-10-16
- 发明人: Kangho Lee , Jimmy Kan , Xiaochun Zhu , Matthias Georg Gottwald , Chando Park , Seung Hyuk Kang
- 申请人： QUALCOMM Incorporated
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理机构： Seyfarth Shaw LLP
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L27/22 ; H01F10/32
摘要：
A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.
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