- 专利标题: Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices
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申请号: US15358822申请日: 2016-11-22
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公开(公告)号: US10069013B2公开(公告)日: 2018-09-04
- 发明人: Nuo Xu , Jing Wang , Woosung Choi
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel, P.A.
- 主分类号: H03F3/187
- IPC分类号: H03F3/187 ; H01L29/786 ; H03F1/02 ; H03F3/45 ; A61B5/0482 ; H01L29/66 ; H01L29/78 ; H01L29/739 ; H01L29/165
摘要:
Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.
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