Invention Grant
- Patent Title: Semiconductor devices having low contact resistance and low current leakage
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Application No.: US14581857Application Date: 2014-12-23
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Publication No.: US10062762B2Publication Date: 2018-08-28
- Inventor: Qing Liu , Xiuyu Cai , Chun-chen Yeh , Ruilong Xie
- Applicant: STMICROELECTRONICS, INC. , GLOBALFOUNDRIES INC. , INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US TX Coppell KY Grand Cayman US NY Armonk
- Assignee: STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US TX Coppell KY Grand Cayman US NY Armonk
- Agency: Seed IP Law Group LLP
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L23/522 ; H01L23/532 ; H01L23/535 ; H01L23/538 ; H01L29/43 ; H01L29/40 ; H01L29/49 ; H01L29/45 ; H01L29/417 ; H01L29/78 ; H01L29/66 ; H01L21/768 ; H01L29/51 ; H01L23/48
Abstract:
The present disclosure is directed to a device and method for reducing the resistance of the middle of the line in a transistor. The transistor has electrical contacts formed above, and electrically connected to, the gate, drain and source. The electrical contact connected to the gate includes a tungsten contact member deposited over the gate, and a copper contact deposited over the tungsten contact member. The electrical contacts connected to the drain and source include tungsten portions deposited over the drain and source regions, and copper contacts deposited over the tungsten portions.
Public/Granted literature
- US20160181390A1 SEMICONDUCTOR DEVICES HAVING LOW CONTACT RESISTANCE AND LOW CURRENT LEAKAGE Public/Granted day:2016-06-23
Information query
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