- 专利标题： Method of manufacturing solar cell
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申请号： US15418336申请日： 2017-01-27
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公开(公告)号： US10050170B2公开(公告)日： 2018-08-14
- 发明人: Juhwa Cheong , Junyong Ahn , Wonjae Chang , Jaesung Kim
- 申请人： LG ELECTRONICS INC.
- 申请人地址： KR Seoul
- 专利权人： LG ELECTRONICS INC.
- 当前专利权人： LG ELECTRONICS INC.
- 当前专利权人地址： KR Seoul
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： KR10-2016-0011825 20160129; KR10-2016-0151337 20161114
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/20 ; H01L31/0236 ; H01L31/0216 ; H01L31/0745 ; H01L31/105 ; H01L31/024 ; H01L31/068 ; H01L31/0224
摘要：
A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.
公开/授权文献
- US20170222085A1 METHOD OF MANUFACTURING SOLAR CELL 公开/授权日：2017-08-03
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