- 专利标题： Extended drain metal-oxide-semiconductor transistor
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申请号： US15883056申请日： 2018-01-29
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公开(公告)号： US10020394B2公开(公告)日： 2018-07-10
- 发明人: Rui Tze Toh , Guan Huei See , Shaoqiang Zhang , Purakh Raj Verma
- 申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人： GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人地址： SG Singapore
- 代理机构： Horizon IP PTE Ltd.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/10
摘要：
Devices and methods for forming a device are disclosed. A substrate is provided. A first body well of a second polarity type is formed in the substrate. A second body well of the second polarity type is formed in the first body well. A bottom of the second body well and a bottom of the first body well are contiguous. Dopant concentrations of the first and second body wells include a graded profile. A transistor of a first polarity type is formed over the substrate. The transistor includes a source and a drain. The source is formed in the second body well.
公开/授权文献
- US20180151726A1 EXTENDED DRAIN METAL-OXIDE-SEMICONDUCTOR TRANSISTOR 公开/授权日：2018-05-31
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