- 专利标题: Asymmetric pass field-effect transistor for nonvolatile memory
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申请号: US15419954申请日: 2017-01-30
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公开(公告)号: US10020060B2公开(公告)日: 2018-07-10
- 发明人: Sungkwon Lee , Venkatraman Prabhakar
- 申请人: Cypress Semiconductor Corporation
- 申请人地址: US CA San Jose
- 专利权人: Cypress Semiconductor Corporation
- 当前专利权人: Cypress Semiconductor Corporation
- 当前专利权人地址: US CA San Jose
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/14 ; G11C16/26 ; G11C16/10 ; G11C16/08 ; H01L27/11582
摘要:
A method of performing an operation on a non-volatile memory (NVM) cell of a memory device is disclosed. The pass transistor of the NVM cell is an asymmetric transistor including a source with a halo implant. The source of the pass transistor is coupled to a common source line (CSL) that is shared among NVM cells of a sector of NVM cells. The operation may be performed by applying a first signal to a word line (WLS) coupled to a gate of a memory transistor of the NVM cell and applying a second signal to a bit line (BL) coupled to a drain of the memory transistor of the NVM cell.
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