Invention Grant
- Patent Title: Multi-gate device and method of fabrication thereof
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Application No.: US15355844Application Date: 2016-11-18
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Publication No.: US10008603B2Publication Date: 2018-06-26
- Inventor: Huan-Sheng Wei , Hung-Li Chiang , Chia-Wen Liu , Yi-Ming Sheu , Zhiqiang Wu , Chung-Cheng Wu , Ying-Keung Leung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L29/165 ; H01L21/02 ; H01L21/311 ; H01L21/306 ; H01L29/06 ; H01L29/423
Abstract:
A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed having a gate dielectric and a gate electrode in the opening. A dielectric material is formed abutting the portion of the gate structure.
Public/Granted literature
- US20180145176A1 MULTI-GATE DEVICE AND METHOD OF FABRICATION THEREOF Public/Granted day:2018-05-24
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