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发明授权
CN1983615B 相变存储器件及其制造方法 有权 转让

相变存储器件及其制造方法
摘要：
一种相变存储器件，具有相变层，具有与相变层保持接触的一端的加热器电极，不同种材料的接触栓塞，具有由第一导电材料制成并与该加热器电极的另一端保持接触的第一导电材料栓塞，以及由具有小于第一导电材料的比电阻的第二导电材料构成的第二导电材料栓塞，第一导电材料栓塞和第二导电材料栓塞至少通过其相应侧表面保持互相接触，加热器电极和第二导电材料栓塞互相不是重叠关系，以及电连接到第二导电材料栓塞的导电层。
摘要（英）：

A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other end of the heater electrode, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being held in contact with each other through at least respective side surfaces thereof, the heater electrode and the second electrically conductive material plug being not in overlapping relation to each other, and an electrically conductive layer electrically connected to the second electrically conductive material plug.

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