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发明授权
CN1881592B 编程硅氧化物氮化物氧化物半导体存储器件的方法 有权

编程硅氧化物氮化物氧化物半导体存储器件的方法
摘要：
本发明提供一种编程硅氧化物氮化物氧化物半导体(SONOS)存储器件的方法。该SONOS存储器件包括衬底、在衬底上间隔开的第一和第二杂质区域、形成在第一和第二杂质区域之间该衬底上方的栅氧化物层、形成在栅氧化物层上方的俘获层、形成在俘获层上方的绝缘层、和形成在绝缘层上方的栅电极。编程SONOS器件的方法包括通过将第一电压施加到第一杂质区域、将栅电压施加到栅电极、和将第二电压施加到第二杂质区域来将数据写入到SONOS存储器件，其中第一电压是正电压，第二电压是负电压，该SONOS存储器件是电子在写入时被俘获在俘获层中的N+型存储器件。
摘要（英）：

A method of programming a silicon oxide nitride oxide semiconductor (SONOS) memory device is provided. The SONOS memory device includes a substrate, first and second impurity regions spaced apart on the substrate, a gate oxide layer formed over the substrate between the first and second impurity regions, a trap layer formed over the gate oxide layer, an insulation layer formed over the trap layer,and a gate electrode formed over the insulation layer. The method of programming the SONOS device includes writing data into the SONOS memory device by applying a first voltage to the first impurityregion, a gate voltage to the gate electrode, and a second voltage to the second impurity region, where the second voltage is a negative voltage.

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