The invention discloses an integrating circuit element and forming method, which comprises the following parts: dielectric material, metal, second energy gap semiconductor, first energy gap semiconductor, wherein the second energy gap semiconductor touches metal phase through lower energy gap, which is lower than first energy gap substrate under 1.1eV. The dielectric layer with fixing stress is deposited by metal, which supplements metal, second energy gap semiconductor and first energy gap substrate stress. The invention reduces the touching resistance, which improves the efficiency and reliability of integral circuit element.