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发明公开
CN1738071A 一种高功函数透明导电氧化物薄膜电极及其制备方法 失效 - 权利终止

一种高功函数透明导电氧化物薄膜电极及其制备方法
摘要：
本发明是一种高功函数铂钨共掺氧化铟(In2O3∶Pt，W)/掺钨氧化铟(IWO)双层透明导电氧化物薄膜电极及其制备方法。本发明以普通玻璃为基板，利用掺钨金属铟镶嵌靶和铂+掺钨金属铟镶嵌靶，通过反应直流磁控溅射技术，在本发明的工作压强和氧分压、溅射电流和溅射电压的条件下制备具有高功函数透明氧化物In2O3∶Pt，W/IWO薄膜电极。所制备的薄膜具有低电阻率、高透射率和高功函数等优良的光电特性。通过掺铂含量和In2O3∶Pt，W层厚度调制透明导电氧化物薄膜的功函数。本发明获得的高功函数透明导电氧化物薄膜电极在新型有机光电器件领域具有良好的应用前景。
摘要（英）：

The invention relates to a high work function platinum-tungsten mixed indium oxide (In203: Pt, W) / tungsten mixed indium oxide (IWO) double-layer transparent conducting oxydic film electrode and its preparing method. The invention uses common glass as base plate, the tungsten mixed indium and the platinum + tungsten indium to embed the target. By the action direct current magnetron sputtering technique, in the working pressure, oxygen partial pressure, sputtering current and the sputtering voltage, the high work function transparent oxydic (In203: Pt, W/IWO) film electrode is prepared. Said film has the excellent optical electric characters of low resistance, high transmissivity, and high work function, while the work function can be adjusted according to the amount of mixed platinum and the thickness of In203: Pt, W layer, therefore, the invention has better application prospect in the field of new organic optical electric device.

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