The invention discloses a light emitting diode. In some embodiments, a light emitting diode includes: a light emitting epitaxial stack including a first semiconductor layer, an active layer, and a second semiconductor layer, having corresponding first and second surfaces; a light-transmitting layer which is formed on the second surface of the light emitting epitaxial laminated layer; a first metallayer which is formed on the surface, far away from the light emitting epitaxial laminated layer, of the light-transmitting layer; a second metal layer which is formed on the surface, far away from the light-emitting epitaxial laminated layer, of the first metal layer, wherein the first metal layer and the second metal layer form a mirror surface structure.