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CN109477206A 溅射靶材及该溅射靶材的制造方法 无效 - 撤回

溅射靶材及该溅射靶材的制造方法
摘要：
提供一种新颖的金属氧化物或新颖的溅射靶材。溅射靶材包含导电材料及绝缘材料。绝缘材料包含含有元素M1的氧化物、氮化物或氧氮化物。元素M1为选自Al、Ga、Si、Mg、Zr、Be和B中的一种或多种的元素。导电材料包含含有铟及锌的氧化物、氮化物或氧氮化物。使用导电材料和绝缘材料彼此分离的溅射靶材沉积金属氧化物膜。
摘要（英）：

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or anoxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitrideincluding indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

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