The invention discloses an enhanced type III-V HEMT device realized by using a full solid-state battery. A second semiconductor layer and a first semiconductor layer are orderly formed on the substrate, and a hetero-structure is formed between the second semiconductor layer and the first semiconductor layer; a source electrode and a drain electrode are electrically connected through two-dimensional electron gas formed in the hetero-structure; a grid electrode is used for controlling the on or off of the two-dimensional electron gas in the hetero-structure; the device further comprises the fullsolid-state battery arranged between the source electrode and the grid electrode; the full solid-state battery is formed by connecting at least one group of battery units in series or parallel, and used for exhausting the two-dimensional electron gas in the corresponding region of the hetero-structure. The enhanced type III-V HEMT device disclosed by the invention can effectively realize the enhanced working mode. Furthermore, the full solid-state battery is compatible with the micro-nano machining process, and can be accomplished at once in the process procedure of the device. And meanwhile,the threshold voltage of the device can be changed through the unit number of the serial solid-state batteries.