The present invention provides an AlGaInP light-emitting diode and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a first LED epitaxial structure, asecond LED epitaxial structure and a third substrate separately, wherein the first LED epitaxial structure comprises a first type AlInP limiting layer, an AlGaInP multiple quantum well layer and a second type AlInP limiting layer, and the second LED epitaxial structure comprises a GaP current spreading layer; bonding the second LED epitaxial structure with the third substrate by using a bonding process; and bonding the first LED epitaxial structure with the second LED epitaxial structure to form a complete light-emitting diode structure. According to the manufacturing method, by using a two-time bonding process, the problems, for example, the temperature higher than the temperature of the growth of an AlGaInP material is needed when the relatively high crystal quality GaP current spreadinglayer is grown; and the time is relatively long, causing a first type doping impurity and a second type doping impurity to spread towards the multiple quantum well layer, and affecting the internal quantum efficiency of multiple quantum well(s), are avoided.