The invention discloses a yellow-green LED and a manufacturing method thereof. The manufacturing method comprises: providing a substrate with a predetermined crystal orientation; growing a buffer layer on a side of the substrate; growing a distributed Bragg reflection layer on a side of the buffer layer away from the substrate; growing a first type of restriction layer on a side of the distributedBragg reflection layer away from the buffer layer; growing a non-doped superlattice active layer on a side of the first type of restriction layer away from the distributed Bragg reflection layer; growing a second type of restriction layer on a side of the non-doped superlattice active layer away from the first type of restriction layer; growing a transition layer on a side of the second type of restriction layer away from the non-doped superlattice active layer; growing a window layer on a side of the transition layer away from the second type of restriction layer; growing a first type of electrode on a side of the window layer away from the transition layer; and growing a second type of electrode on a side of the substrate away from the buffer layer. The yellow-green LED has high light intensity in the normal direction and very high chip brightness.