The invention discloses an ion emission method for increasing ion implantation beam. The device comprises an ion source, a first drain, a storage magnetic field and a magnetic analysis component, wherein the first drain is arranged in an outlet direction of the ion source; the storage magnetic field and an outlet of the first drain deflect a certain angle, the angle makes ions passing through the first drain enter the storage magnetic field to carry out circular motion, and the magnetic analysis component is used for detecting and separating the ions in the storage magnetic field; the ions ionized by the ion source are extracted through the first drain; the ions extracted by the first drain enter the storage magnetic field to carry out circular motion; and when the number of the ions in the storage magnetic field reaches a specified value, the ions in the storage magnetic field are released into the magnetic analysis component. According to the ion emission method for increasing the ion implantation beam, which is provided by the invention, the ion implantation beam can be increased, so that the uniformity and the efficiency of an ion implantation process are improved.