The invention discloses a subsection gate field plate vertical type current aperture power device. The current aperture power device comprises a drain (11), a substrate (1), a drifting layer (2), an aperture layer (3), two symmetrical two-stage-step-shaped current blocking layers (4), a channel layer (6), a barrier layer (7) and a gate (10) from the bottom up; two sources (9) are deposited on the two sides of the barrier layer (7); two injection regions (8) are formed below the two sources (9) through ion implantation; all regions, except the drain bottom, are covered with a passivation layer (13); a subsection gate field plate (12) is manufactured in the passivation layer on the two sides separately; the subsection gate field plate consists of multiple mutually-independent floating field plates and a gate field plate; the gate field plate is electrically connected with the gate; and an aperture (5) is formed between the two current blocking layers (4). The current aperture power device has high breakdown voltage, simple process, low conduction resistance and high rate of finished products, and can be used for a power electronic system.