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发明公开
CN106653583A 一种大尺寸III‑V异质衬底的制备方法 无效 - 驳回

一种大尺寸III‑V异质衬底的制备方法
摘要：
本发明提供一种大尺寸III‑V异质衬底的制备方法，所述制备方法包括以下步骤：S1：提供III‑V外延结构，所述III‑V外延结构具有注入面；S2：于所述注入面进行离子注入，于所述III‑V外延结构的预设深度处形成缺陷层；S3：提供支撑衬底，将所述注入面与所述支撑衬底键合；S4：沿所述缺陷层剥离部分所述III‑V外延结构，使所述III‑V外延结构的一部分转移到所述支撑衬底上，以在所述支撑衬底上形成III‑V薄膜，获得III‑V异质衬底。本发明提供了一种大尺寸III‑V异质衬底的制备方法，用于解决现有技术中制备大尺寸III‑V异质衬底工艺难度大、效率低、成本高的问题。
摘要（英）：

The invention provides a preparation method of a large-size III-V heterogeneous substrate. The preparation method comprises the following steps that S1) a III-V epitaxial structure which includes an injection surface is provided; S2) ion implantation is carried out on the injection surface, and a defect layer is formed in a position of a preset depth of the III-V epitaxial structure; S3) a support substrate is provided, and the injection surface is bonded to the support substrate; and S4) part of the III-V epitaxial structure is peeled along the defect layer, so that part of the III-V epitaxial structure is transferred on the support substrate to form an III-V film on the support substrate, and the III-V heterogeneous substrate is obtained. The preparation method of the large-size III-V heterogeneous substrate can be used to solve the problems that preparation of the large-size III-V heterogeneous substrate in the prior art is high in technical difficulty, low in efficiency and high in cost.

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