The invention relates to an inclined seed crystal tray for growth of a high-quality silicon carbide crystal and a growth method of the high-quality silicon carbide crystal. The range of an included angle between a plane on which the seed crystal tray is in contact with a seed crystal and a horizontal direction is that alpha is more than 0 degree and smaller than or equal to 30 degrees. When the inclined seed crystal tray provided by the invention is adopted, the defect density of the prepared crystal can be effectively reduced, and a deflection-angle-free wafer can be directly selected as a seed crystal, so that the cost of preparing the crystal is effectively reduced.