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发明授权
CN105405867B 形成具有隐埋腔和介电支持结构的半导体衬底的方法 有权

形成具有隐埋腔和介电支持结构的半导体衬底的方法
摘要：
本公开涉及形成具有隐埋腔和介电支持结构的半导体衬底的方法。具体地，公开了一种用于形成半导体器件的方法，包括形成从半导体衬底的第一表面延伸到半导体衬底中的多个沟槽。每一个沟槽都包括与宽部开放连通的窄部，宽部通过窄部与第一表面隔开。相邻沟槽的窄部通过半导体衬底的第一区域横向隔开。相邻沟槽的宽部通过半导体衬底的第二区域横向隔开，第二区域窄于第一区域。该方法还包括通过沟槽的窄部向沟槽的宽部引入氧化剂以氧化相邻沟槽之间的半导体衬底的第二区域，从而形成支持半导体衬底的第一区域的介电支持结构。
摘要（英）：

A method of forming a semiconductor device includes forming a plurality of trenches extending into a semiconductor substrate from a first surface of the semiconductor substrate. Each of the trenches includes a narrower part in open communication with a wider part that is spaced apart from the first surface by the narrower part. The narrower part of adjacent trenches is laterally separated by a first region of the semiconductor substrate. The wider part of adjacent trenches is laterally separated by a second region of the semiconductor substrate that is narrower than the first region. The method further includes introducing an oxidizing agent into the wider part of the trenches through the narrower part of the trenches to oxidize the second region of the semiconductor substrate between adjacent trenches to form dielectric support structures that support the first region of the semiconductor.

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