The present invention mainly relates to a semiconductor power device. The end connection structure of a power device comprises a plurality of end connection groups formed in a light doping epitaxial layer of a first conduction type and above a heavy doping semiconductor substrate of a second conduction type. Each end connection group comprises one groove formed in the light doping epitaxial layer of the first conduction type, all the side walls of the groove are covered by a plurality of epitaxial layers of alternated conduction types, and the plurality of epitaxial layers are precipitated at two opposite edges. All the side walls of the groove are basically symmetrical with a central gap filling layer between two innermost epitaxial layers of the deepest conduction type.