The present invention relates to a chip back assembly active buried structure and a manufacturing process thereof. The manufacturing process comprises a step of providing a carrier plate for carrying a chip, a step of temporarily bonding a substrate dam body on the carrier plate through a damming dielectric layer, and arranging a groove body on the dam body, a step of mounting a chip in the groove body in a way that the front convex point of the chip is connected to the copper convex point of the upper surface of the carrier plate and the back side of the chip is exposed, a step of bonding the chip and the carrier plate through lamination and filling the damming dielectric layer at the bottom of the chip and the gap between the chip and the substrate dam body, and a step of planting a BGA ball on a carrier plate lower surface pad. By using the chip back buried process, combined with the high temperature lamination process, the bonding of the chip convex point and the carrier plate convex point is directly completed, the damming dielectric layer is arranged between the chip and the carrier plate, the process is simple, the substrate process compatibility is good, the process cost is greatly reduced and the chip package performance is improved greatly, the back side of the chip is exposed by using the chip back assembly mode, and the problem of difficult heat radiation of chip embedment is solved.