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发明公开
CN104795328A 一种沟槽型VDMOS制造方法和一种沟槽型VDMOS 有权 转让

一种沟槽型VDMOS制造方法和一种沟槽型VDMOS
摘要：
本发明提供一种沟槽型VDMOS制造方法和一种沟槽型VDMOS，包括：在第一导电类型衬底上，形成包括低电阻区的第一导电类型外延层，所述低电阻区位于所述第一导电类型外延层内部，与所述第一导电类型衬底平行；在所述第一导电类型外延层形成栅极，所述栅极底部位于所述低电阻区底部；在所述第一导电类型外延层形成第二导电类型体区和第一导电类型源区，所述第二导电类型与第一导电类型相反，所述第二导电类型体区底部位于所述低电阻区顶部；在所述第一导电类型外延层表面形成介质层和源极金属层，在所述第一导电类型衬底背面形成漏极金属层。本发明优化了器件结构，使得通过器件的电流均匀分布，改善了因大电流局部过热容易发生的烧毁现象。
摘要（英）：

The invention provides a trench-type VDMOS manufacturing method and a trench-type VDMOS. The method comprises steps: on a substrate of a first conductive type, an epitaxial layer of the first conductive type comprising a low resistance region is formed, wherein the low resistance region is located in the inner part of the epitaxial layer of the first conductive type and parallel to the substrate of the first conductive type; a gate is formed on the epitaxial layer of the first conductive type, wherein the bottom part of the gate is located at the bottom part of the low resistance region; a body region of a second conductive type and a source region of the first conductive type are formed on the epitaxial layer of the first conductive type, wherein the second conductive type is opposite to the first conductive type, and the bottom part of the body region of the second conductive type is located at the top part of the low resistance region; a dielectric layer and a source metal layer are formed on the surface of the epitaxial layer of the first conductive type, and a drain metal layer is formed on the back face of the substrate of the first conductive type. The device structure is optimized, current passing through the device is uniformly distributed, and the burnt down phenomenon due to local overheating caused by large current is improved.

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