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发明公开
CN104641255A X射线辐射探测器、计算机断层成像系统和为此的方法 有权 转让

X射线辐射探测器、计算机断层成像系统和为此的方法
摘要：
本发明涉及一种用于探测X射线辐射、尤其用于在CT系统(C1)中使用的直接转换的X射线辐射探测器(C3，C5)，至少具有用于探测X射线辐射的半导体材料(1)、至少一个准直器(2)和以附加辐射辐照半导体材料(1)的至少一个辐射源(6)，其中该至少一个准直器(2)在朝向半导体材料(1)的侧上具有至少一个反射层(3)，借助该反射层将附加辐射反射到半导体材料(1)上。此外，本发明涉及一种具有直接转换的X射线辐射探测器(C3，C5)的CT系统，以及一种用于借助直接转换的X射线辐射探测器(C3，C5)探测入射的X射线辐射的、尤其用于在CT系统(C1)中使用的方法，其中借助至少一个反射层(3)以附加辐射间接辐照用于探测的半导体材料(1)，以生成附加的载流子。
摘要（英）：

The invention relates to a direct-converting x-ray radiation detector (C3, C5) for detecting x-ray radiation, in particular for use in a CT system (C1), at least having a semiconductor material (1) used for detecting the x-ray radiation, at least one collimator (2) and at least one radiation source (6), which irradiates the semiconductor material (1) with additional radiation, wherein the at least one collimator (2) has at least one reflection layer (3) on a side facing the semiconductor material (1), on which the additional radiation is reflected to the semiconductor material (1). The invention further relates to a CT system having a direct-converting x-ray radiation detector (C3, C5) and a method for detecting incident x-ray radiation by means of a direct-converting x-ray radiation detector (C3, C5), in particular for use in a CT system (C1), wherein a semiconductor material (1) used for detection is indirectly irradiated with additional radiation by means of at least one reflection layer (3) in order to generate additional charge carriers.

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