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发明公开
CN104520988A 覆晶堆叠的方法 有权

覆晶堆叠的方法
摘要：
一种覆晶堆叠的方法，其包含：形成(201)一空腔晶圆(301)，其包括多个空腔(303)以及一对转角导轨(305)；放置(203)一直通硅穿孔(TSV)中介片在该空腔晶圆上，该TSV中介片具有被耦合至该TSV中介片的一表面的多个焊接凸块(107)，使得该焊接凸块位于该多个空腔中，而该TSV中介片位于该对转角导轨之间；放置(205)一集成电路(IC)晶粒(109)在该TSV中介片的另一表面上，使得该IC晶粒、该TSV中介片、以及该焊接凸块会形成一已堆叠的中介片单元(113)；从该空腔晶圆处移除(207)该已堆叠的中介片单元；以及将该已堆叠的中介片单元的该焊接凸块粘结(209)至一有机基板(101)，使得该已堆叠的中介片单元与该有机基板会形成覆晶(300)。
摘要（英）：

A method for flip chip stacking includes forming (201) a cavity wafer (301) comprising a plurality of cavities (303) and a pair of corner guides (305), placing (203) a through-silicon-via (TSV) interposer (103) with solder bumps (107) coupled to a surface of the TSV interposer on the cavity wafer, such that the solder bumps are situated in the plurality of cavities and the TSV interposer is situated between the pair of corner guides, placing (205) an integrated circuit (IC) die (109) on another surface of the TSV interposer, such that the IC die, the TSV interposer, and the solder bumps form a stacked interposer unit (113), removing (207) the stacked interposer unit from the cavity wafer, and bonding (209) the solder bumps of the stacked interposer unit to an organic substrate (101) such that the stacked interposer unit and the organic substrate form a flip chip (300).

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