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发明公开
CN104332539A GaN基LED外延结构及其制造方法 有权

GaN基LED外延结构及其制造方法
摘要：
本发明提出了一种GaN基LED外延结构及其制造方法。所述GaN基LED外延结构包括：衬底；在所述衬底上外延生长的GaN基LED外延结构，其中所述衬底是含光致发光荧光材料的衬底。通过使用稀土元素掺杂Re3Al5O12衬底，使得LED外延结构的光电效率提高、并且降低了器件的发热量；由于LED外延层结构是以荧光材料为衬底，由该外延结构制备的LED芯片可实现直接的白光发射，从而简化了白光LED光源的制备工序，降低了生产成本；通过先外延、然后图形化衬底、再进行侧向生长GaN基外延结构降低了外延结构的缺陷密度。
摘要（英）：

The invention provides a GaN base LED epitaxial structure and a manufacturing method thereof. The GaN base LED epitaxial structure comprises the components of a substrate; and a GaN base LED epitaxial structure which epitaxially grows on the substrate, wherein the substrate contains photoluminescent fluorescent material. Through doping a Re3Al5O12 substrate by rare earth elements, photoelectric efficiency of the LED epitaxial structure is improved and furthermore heating amount of a device is reduced. Because the substrate of the LED epitaxial structure is made of fluorescent material, the LED chip which is prepared by the epitaxial structure can realize direct white-light emission, thereby simplifying preparing process for a white-light LED light source, and reducing production cost. Defect density of the epitaxial structure is reduced through epitaxy, substrate patterning, and lateral growth of the GaN base epitaxial structure.

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