The present invention provides a photovoltaic device and a method for producing the same. A photovoltaic device (10) is provided with a photovoltaic layer (3) formed by laminating, in order, a p-type semiconductor layer (31), an i-type semiconductor layer (32), and an n-type semiconductor layer (33). The p-type semiconductor layer (31) comprises p-type thin silicon films (311 to 313). The p-type thin silicon films (311 and 312) use pulse power created by superimposing low-frequency pulse power from 100 Hz to 1 kHz on high-frequency power from 1 MHz and 50 MHz as plasma excitation power. The density of the high-frequency power is 100 to 300 mW/cm<2>, and the pressure during plasma processing is 300 to 600 Pa. Under conditions in which the substrate temperature during plasma processing is 140 to 190 DEG C, thin silicon film having p-type conductivity is deposited, and thin silicon film is formed through nitriding. The p-type thin silicon film (313) is deposited under the abovementioned conditions.