The invention discloses a vertical double-diffusion metal oxide semiconductor field effect transistor (MOSFET), which comprises a metallization drain 1, an N<+> substrate 2, an N<-> drift region 3, a deep P body region 5, an N type heavy doping source region 6, a P type heavy doping region 7, an N type buried layer channel 8, a P type epitaxial layer 9, a gate oxidation layer 10, a polysilicon gate electrode 11 and a metallization source 12. When the vertical double-diffusion MOSFET is switched on, the switch-on resistance of a device is greatly reduced through the common electricity conducting mechanism of two channels; and when the vertical double-diffusion MOSFET is switched off, electric fields of the channels are shielded through a P+N junction barrier, so that a higher voltage-resisting level of more than 1,000V is realized.