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发明公开
CN102290378A 半导体装置及其制造方法 有权

半导体装置及其制造方法
摘要：
一种半导体装置及其制造方法，该装置包括：一基板，具有一密封环区与一电路区；多个假栅极，位于该基板的该密封环区之上；以及一密封环结构，设置于该密封环区内的所述多个假栅极之上。该制造方法包括：提供一基板，具有一密封环区与一电路区；形成多个假栅极于该基板的该密封环区之上；以及形成一密封环结构于该密封环区内的所述多个假栅极之上。本发明可大体减少或消除密封环区内的碟化效应。
摘要（英）：

The present disclosure provides a semiconductor device and a method for manufacturing the same. The device includes a substrate having a seal ring region and a circuit region, a plurality of dummy gates disposed over the seal ring region of the substrate, and a seal ring structure disposed over the plurality of dummy gates in the seal ring region. A method of fabricating a semiconductor device isalso provided, the method including providing a substrate having a seal ring region and a circuit region, forming a plurality of dummy gates over the seal ring region of the substrate, and forming a seal ring structure over the plurality of dummy gates over the seal ring region. The semiconductor device and the method for manufacturing the same can generally reduce or eliminate disc effect in theseal ring region.

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