The present invention provides a semiconductor device which solves a problem that heat dissipation properties are deteriorated in a case where the thickness of the bonding member is increased for controlling a much larger current. The semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.