The invention discloses a method for performing quantitative analysis on a SiGe thin film by using an X-ray characteristic spectrum. In the method, CVD (chemical vapor deposition) SiGe(silicon germanium) standard multilayer gradient thin film is used as a standard sample, a secondary ion mass spectrometer (SIMS) is used to measure the components of the thin film, and the components are used as the standard components in the energy-dispersive X-ray spectroscopic (EDS) analysis on the SiGe; and the technical method (including a Cliff-Lorimer facor for performing quantitative analysis on the SiGe technical thin film, namely a coefficient KSiGe, obtained by experiments) for performing the EDS quantitative analysis on the SiGe technical thin film is thus obtained. The method fills a blank in SiGe thin film project and technique for performing material quantitative analysis by energy-dispersive X-ray spectroscopy. The method adopts a simple process, has high maneuverability of the method, and can reduce production expense greatly and improve efficiency.