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CN101826534B 半导体装置及其制造方法 有权

半导体装置及其制造方法
摘要：
一种半导体装置及其制造方法，所述半导体装置包括：具有绝缘面的基板；设置在基板上的透光第一电极；设置在基板上的透光第二电极；设置为电连接于第一电极及第二电极的透光半导体层；电连接于第一电极的第一布线；至少覆盖半导体层而设置的绝缘层；设置在与半导体层重叠的区域的绝缘层上的透光第三电极；以及电连接于第三电极的第二布线。
摘要（英）：

A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.

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