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发明授权
CN101740502B 碲镉汞微台面红外探测芯片的光敏感元列阵成形方法 有权

碲镉汞微台面红外探测芯片的光敏感元列阵成形方法
摘要：
本发明公开了一种碲镉汞微台面红外探测芯片的光敏感元列阵成形方法，它涉及光电探测器制造工艺技术。本发明采用先于碲镉汞红外焦平面探测芯片表面制作用于形成深微台面列阵芯片隔离沟槽的光刻胶掩蔽膜图形，然后利用旋转涂敷的方法往光刻胶掩蔽膜构成的沟槽图形内填充一定数量的碲镉汞材料的溴与氢溴酸混合腐蚀液，并通过控制光刻胶掩蔽膜形成的隔离沟槽图形的深度和腐蚀时间来控制深微台面列阵芯片所需的隔离沟槽深度的技术方案，有效解决了常规光敏感元列阵成形方法存在工艺损伤和占空比低的问题。本发明方法具有与HgCdTe探测芯片常规工艺完全兼容、低成本、高可控性、高均匀性和无工艺诱导电学损伤等特点。
摘要（英）：

The invention discloses a light sensitive component array forming method of a mercury cadmium telluride micro-table-board infrared detection chip, which relates to a manufacturing process technology of a photoelectric detector. The invention adopts the technical scheme that the forming method comprises the following steps of: firstly manufacturing a photoresist masking film graph for forming a deep micro-table-board array chip isolated groove on the surface of a mercury cadmium telluride infrared focal plane detection chip, then filling a certain quantity of bromine and hydrobromic acid mixedcorrosive liquid of a mercury cadmium telluride material in a groove graph formed from a photoresist masking film by utilizing a spin-coating method, and controlling the depth of the isolated groove required by a deep micro-table-board array chip through controlling the depth and the corrosion time of the isolated groove graph formed from the photoresist masking film, thereby effectively solving the problems of process damage and low duty ratio existing in a conventional light sensitive component array forming method. The method has the characteristics of complete compatibility with a conventional process of the HgCdTe detection chip, low cost, high controllability, high uniformity, no process-induced electrical damage and the like.

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