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发明授权
CN101303970B 光刻工艺的进行方法 有权

光刻工艺的进行方法
摘要：
本发明涉及一种光刻工艺的进行方法，本发明的一实施例中，提供一衬底包含一光刻胶层，并使光刻胶层曝光。应用一第一化学清洗溶液于该曝光后的光刻胶层，其中该第一化学清洗溶液包含一第一醇基化学药剂。显影该曝光后的光刻胶层。于该显影后的光刻胶层应用一第二化学清洗溶液，其中该第二化学清洗溶液包含一第二醇基化学药剂；以及在该第二化学清洗溶液的应用后旋转风干该衬底。
摘要（英）：

The invention discloses a method of performing a lithography process. In one embodiment of the invention, a substrate including a layer of photoresist is provided. The layer of photoresist is exposed. A first chemical rinse solution is applied to the exposed photoresist layer. The first chemical rinse solution includes a first alcohol base chemical. The exposed layer of photoresist is developed. A second chemical rinse solution is applied to the developed photoresist layer. The second chemical rinse solution includes a second alcohol base chemical. The substrate is spun dry after the application of the second chemical rinse solution.

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