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    IMAGE SENSOR WITH CONTROLLED SPAD AVALANCHE
    4.
    发明公开
    IMAGE SENSOR WITH CONTROLLED SPAD AVALANCHE 审中-公开

    公开(公告)号：US20240314465A1

    公开(公告)日：2024-09-19

    申请号：US18677949

    申请日：2024-05-30

    申请人： PixArt Imaging Inc.

    发明人： TSO-SHENG TSAI

    IPC分类号： H04N25/75 ,  H01L27/146 ,  H01L31/107 ,  H04N25/76

    CPC分类号： H04N25/75 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/76 ,  H01L31/107

    摘要： There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode (SPAD) and a floating diffusion. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits. The floating diffusion is used to record a voltage of one photon event detected by the SPAD in an exposure period.

    Optical semiconductor device
    6.
    发明授权
    Optical semiconductor device 有权

    公开(公告)号：US12080813B2

    公开(公告)日：2024-09-03

    申请号：US17665885

    申请日：2022-02-07

    申请人： HAMAMATSU PHOTONICS K.K.

    发明人： Fumitaka Nishio ,  Masatsugu Takatsuka

    IPC分类号： H01L31/024 ,  H01L25/16 ,  H01L31/0203 ,  H01L31/107

    CPC分类号： H01L31/024 ,  H01L25/165 ,  H01L25/167 ,  H01L31/0203 ,  H01L31/107

    摘要： An optical semiconductor device includes a wiring board including a first surface and a second surface, a cover disposed to face the first surface, an optical semiconductor element disposed on the first surface, a plurality of electrodes disposed on the second surface, and a resist layer disposed on the second surface and located at least between the plurality of electrodes. A ventilation hole that penetrates the first surface and the second surface is formed in the wiring board. The second surface includes a disposition region in which the resist layer is disposed and a non-disposition region in which the resist layer is not disposed. The non-disposition region includes a first region in which the ventilation hole is disposed and a second region that reaches an edge of the second surface from the first region.

    Image sensor with photosensitivity enhancement region
    8.
    发明授权
    Image sensor with photosensitivity enhancement region 有权

    公开(公告)号：US12062671B2

    公开(公告)日：2024-08-13

    申请号：US17349202

    申请日：2021-06-16

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Tzu-Jui Wang ,  Yuichiro Yamashita

    IPC分类号： H01L27/146 ,  H01L31/107

    CPC分类号： H01L27/1461 ,  H01L27/14607 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/107

    摘要： The present disclosure relates to an image sensor including a pixel along a substrate. The pixel includes a first semiconductor region having a first doping type. A second semiconductor region is directly over the first semiconductor region. The second semiconductor region has a second doping type opposite the first doping type and meets the first semiconductor region at a p-n junction. A ring-shaped third semiconductor region laterally surrounds the first and second semiconductor regions. The ring-shaped third semiconductor region has the first doping type. A ring-shaped fourth semiconductor region laterally surrounds the ring-shaped third semiconductor region. The ring-shaped fourth semiconductor region has the second doping type. A ring-shaped fifth semiconductor region is directly over the ring-shaped third semiconductor region and has the second doping type.

    PIE PHOTODETECTOR
    9.
    发明公开
    PIE PHOTODETECTOR 审中-公开

    公开(公告)号：US20240243214A1

    公开(公告)日：2024-07-18

    申请号：US18156301

    申请日：2023-01-18

    申请人： Cisco Technology, Inc.

    发明人： Rajat SHARMA ,  Attila MEKIS ,  Gianlorenzo MASINI

    IPC分类号： H01L31/107 ,  H01L31/0232

    CPC分类号： H01L31/1075 ,  H01L31/02325 ,  H01L31/02327

    摘要： A photodetector and method of making a photodetector are disclosed. An apparatus includes a semiconductor disk, a first doped region, and a first absorption region. The first doped region is disposed within the semiconductor disk such that the first doped region extends across a center of the semiconductor disk. The first doped region has a first doping type. The first absorption region is disposed on the first doped region such that a portion of the first doped region is positioned between the center of the semiconductor disk and the first absorption region along a radius of the semiconductor disk. The first absorption region includes a second doped region with a second doping type different from the first doping type. The first absorption region is arranged to absorb an optical signal as the optical signal travels along an inner circumference of the semiconductor disk.