公开(公告)号：US06825500B1

公开(公告)日：2004-11-30

申请号：US09830036

申请日：2001-04-19

Applicant: Nobuyuki Komaba

Inventor： Nobuyuki Komaba

IPC: H01L29221

CPC classification number: H01L33/30 ,  Y10S257/918

Abstract: A light-emitting thyristor having an improved luminous efficiency is provided. According to the light-emitting thyristor, a p-type AlGaAs layer and an n-type AlGaAs layer are alternately stacked to form a pnpn structure on a GaAs buffer layer formed on a GaAs substrate, and Al composition of the AlGaAs layer just above the GaAs buffer layer is increased in steps or continuously.

公开(公告)号：US06686608B1

公开(公告)日：2004-02-03

申请号：US09656766

申请日：2000-09-07

Applicant: Yoshiyuki Takahira

Inventor： Yoshiyuki Takahira

IPC: H01L29221

CPC classification number: H01L33/32 ,  H01L33/02 ,  H01L33/325

Abstract: A nitride semiconductor light emitting device of the present invention includes; a GaN substrate into which a group VII element is doped; an intermediate layer section provided on the GaN substrate; and a light emitting layer provided on the intermediate layer section. The intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer.

Abstract translation: 本发明的氮化物半导体发光器件包括： 掺杂有Ⅶ族元素的GaN衬底; 设置在所述GaN衬底上的中间层部分; 以及设置在中间层部分上的发光层。 中间层部分具有足够的厚度以防止在发光层中检测到来自GaN衬底的第VII族元素的扩散。

公开(公告)号：US06633054B2

公开(公告)日：2003-10-14

申请号：US09789560

申请日：2001-02-22

Applicant: Shoji Hirata ,  Hironobu Narui

Inventor： Shoji Hirata ,  Hironobu Narui

IPC: H01L29221

CPC classification number: H01S5/164 ,  H01L33/0062 ,  H01S5/0207 ,  H01S5/1064 ,  H01S5/2081

Abstract: A method of fabricating a semiconductor light-emitting device in which the window structure can readily be obtained without relying upon an advanced process technology. In the method of the present invention, a first multi-layered film formed on a substrate is patterned into a groove pattern having a widened portion and narrowed portions provided on both sides of such widened portion. A second multi-layered film is then epitaxially grown on the substrate so as to cover the groove pattern, by successively growing an n-type second lower clad layer, a second active layer, a p-type second upper clad layer and a p-type cap layer. The cap layer is then patterned to thereby form a current injection layer on the second multi-layered film within the groove pattern so as to be extended along the longitudinal direction of such groove pattern.

Abstract translation: 一种制造半导体发光器件的方法，其中可以在不依赖于先进工艺技术的情况下容易地获得窗户结构。 在本发明的方法中，将形成在基板上的第一多层膜图案化成具有加宽部分和设置在这种加宽部分的两侧上的变窄部分的凹槽图案。 然后通过依次生长n型第二下包层，第二有源层，p型第二上覆层和p型第二上包覆层，在衬底上外延生长第二多层膜，以覆盖沟槽图案。 盖帽层。 然后对盖层进行图案化，从而在凹槽图案内的第二多层膜上形成电流注入层，以沿着这种凹槽图案的纵向方向延伸。

公开(公告)号：US06603147B1

公开(公告)日：2003-08-05

申请号：US09587254

申请日：2000-06-02

Applicant: Shigeki Hashimoto ,  Katsunori Yanashima ,  Masao Ikeda ,  Hiroshi Nakajima

Inventor： Shigeki Hashimoto ,  Katsunori Yanashima ,  Masao Ikeda ,  Hiroshi Nakajima

IPC: H01L29221

CPC classification number: H01L33/32 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/32341

Abstract: A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer is made of two or more semiconductor layers different in band gap, and a part of the p-type cladding layer near one of its boundaries nearer to the active layer is made of a semiconductor layer having a large band gap than that of the remainder part. More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer is made of a p-type Alx1Ga1−x1N layer in contact with a p-type GaN optical guide layer, and a p-type Alx2Ga1−x2N layer overlying the p-type Alx1Ga1−x1N layer (where 0≦x2

Abstract translation: 改进了使用氮化物III-V化合物半导体的半导体发光器件，几乎不增加工作电压，从而降低阈值电流密度。 在作为其一个版本的GaN半导体激光器中，p型覆层由带隙不同的两个以上的半导体层构成，并且在靠近有源层的边界附近的p型覆层的一部分为 由具有比剩余部分大的带隙的半导体层制成。 更具体地，在AlGaN / GaN / GaInN SCH结构的GaN半导体激光器中，p型AlGaN包层由与p型GaN光导层接触的p型Al x Ga 1-x N层构成，p 型Alx2Ga1-x2N层，其中p型Alx1Ga1-x1N层（其中0 <= x2