公开(公告)号：US06376394B1

公开(公告)日：2002-04-23

申请号：US09617458

申请日：2000-07-17

Applicant: Cheng-Yuan Tsai ,  Chih-Chien Liu ,  Ming-Sheng Yang

Inventor： Cheng-Yuan Tsai ,  Chih-Chien Liu ,  Ming-Sheng Yang

IPC: H01L2101

CPC classification number: H01L21/31053 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76834

Abstract: A fabrication method for an inter-metal dielectric layer is applicable to multi-level interconnects. A substrate is provided with metal lines formed thereon. A first (fluorinated silicon glass) FSG layer with low fluorine content is then formed on the substrate, followed by forming a biased-clamped FSG layer on the first FSG layer. A second FSG layer with low fluorine content is formed on the biased-clamped layer, prior to forming an oxide cap layer on the second FSG layer. The oxide cap layer is planarized until the oxide cap layer is level with the second FSG layer.

Abstract translation: 金属间介电层的制造方法适用于多层互连。 衬底上形成有金属线。 然后在衬底上形成具有低氟含量的第一（氟化硅玻璃）FSG层，随后在第一FSG层上形成偏置夹持的FSG层。 在第二FSG层上形成氧化物覆盖层之前，在偏压夹层上形成具有低氟含量的第二FSG层。 氧化物盖层被平坦化，直到氧化物覆盖层与第二FSG层平齐。

公开(公告)号：US06268631B1

公开(公告)日：2001-07-31

申请号：US09294338

申请日：1999-04-20

Applicant: Takeshi Fukada ,  Mitsunori Sakama ,  Satoshi Teramoto

Inventor： Takeshi Fukada ,  Mitsunori Sakama ,  Satoshi Teramoto

IPC: H01L2101

CPC classification number: C03C17/3482 ,  C03B25/00 ,  C03B32/00 ,  C03C17/001 ,  C03C17/22 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2218/32 ,  Y02P40/57

Abstract: Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point. If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.

Abstract translation: 改进的玻璃基板的热处理方法，特别是在其应变点周围或之上热处理基板（例如膜的形成，膜的生长和氧化）的情况。 如果在基板上形成产生热量的装置，则能够很好地散热。 在基板的至少一个表面上形成氮化铝膜。 该氮化铝膜用作散热器，并且防止由诸如形成在玻璃基板表面上的TFT的器件产生的局部热量。