公开(公告)号：US06384519B1

公开(公告)日：2002-05-07

申请号：US08960759

申请日：1997-10-30

申请人： Charles P. Beetz, Jr. ,  John Steinbeck ,  Robert W. Boertsler ,  David R. Winn

发明人： Charles P. Beetz, Jr. ,  John Steinbeck ,  Robert W. Boertsler ,  David R. Winn

IPC分类号： H01J4320

CPC分类号： H01J43/246 ,  H01J43/22

摘要： A microdynode electron multiplier provides numerous microchannels extending parallel to one another through a layered structure incorporating insulating spacer layers and dynode layers which either incorporate a conductive electrode layer or are contiguous with a conductive electrode layer. The dynode layers include materials with high electron emissivity. The dynode layers can be biased to different electrical potentials to provide a potential gradient along the length of each microchannel. Multi-stage electron multiplication provides high gain. The device desirably is formed as a monolithic, sealed structure with a cathode structure such as a photocathode and an anode structure. The device can provide a multi pixel imaging device of extremely high sensitivity and resolution.

摘要翻译： 微型电子电子倍增器通过结合有绝缘间隔层和倍增极层的分层结构彼此平行延伸，提供了许多微通道，其中结合有导电电极层或与导电电极层邻接。 倍增极层包括具有高电子发射率的材料。 倍增极层可以被偏置到不同的电势以沿着每个微通道的长度提供电位梯度。 多级电子倍增提供高增益。 该装置理想地形成为具有诸如光电阴极和阳极结构的阴极结构的整体式密封结构。 该器件可以提供极高灵敏度和分辨率的多像素成像设备。

公开(公告)号：US06538376B1

公开(公告)日：2003-03-25

申请号：US09694267

申请日：2000-10-24

申请人： Suenori Kimura ,  Masuo Ito

发明人： Suenori Kimura ,  Masuo Ito

IPC分类号： H01J4320

CPC分类号： H01J43/16 ,  H01J43/12

摘要： In this photomultiplier tube 1, light incident on a light-receiving faceplate 3 is converted into photoelectrons by a photosensitive surface 3a, and the photoelectrons strike a dynode 4 to emit many secondary electrons. The secondary electrons are then collected by a mesh-like anode 5. Since the anode 5 is disposed to be parallel to the photosensitive surface 3a, the photoelectrons emerging from the photosensitive surface 3a can easily pass through a mesh portion 5a, and many photoelectrons can be made to strike the dynode 4. As the number of photoelectrons incident on the dynode 4 increases, the number of secondary electrons from the dynode 4 increases. This improves the gain characteristics of the photomultiplier tube 1. Since a secondary electron emission surface 4a of the dynode 4 is tilted with respect to the anode 5, photoelectrons having passed through the anode 5 obliquely strike the secondary electron emission surface 4a of the dynode 4.

摘要翻译： 在该光电倍增管1中，入射到受光面板3上的光被光敏表面3a转换为光电子，并且光电子撞击倍增极4以发射许多二次电子。 二次电子然后被网状阳极5收集。由于阳极5被设置为平行于感光表面3a，从感光表面3a出射的光电子可以容易地通过网孔部分5a，并且许多光电子体 随着入射到倍增极4上的光电子的数量增加，来自倍增极4的二次电子的数量增加。 这改善了光电倍增管1的增益特性。由于倍增极4的二次电子发射表面4a相对于阳极5倾斜，所以通过阳极5的光电子倾斜地撞击倍增极4的二次电子发射表面4a 。