公开(公告)号：US20040173142A1

公开(公告)日：2004-09-09

申请号：US10791456

申请日：2004-03-02

发明人： Peter M. Willis

IPC分类号： C30B001/00 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： F27D21/0014 ,  F27B14/00 ,  F27B14/20 ,  F27B17/02 ,  F27D19/00 ,  G01G19/00 ,  G01N5/04 ,  H05B6/28 ,  Y10T117/10

摘要： An analytical furnace includes a predictive temperature control which is trained to model crucible temperature during analysis by employing a pair of temperature sensors, with one sensor being mounted in the furnace in fixed relationship and a second sensor which can be positioned within a crucible for training and tuning a crucible temperature profile, such that the crucible temperature in which a sample is placed is modeled and its response to the application of energy to the furnace in accordance with the furnace's dynamic thermal characteristics is known. By modeling the temperature profile within a crucible, the furnace can be controlled to provide a faster, more accurate analysis and prevent excessive overshooting of temperature as desired temperature plateaus are approached.

摘要翻译： 分析炉包括预测温度控制，其通过采用一对温度传感器在分析期间对坩埚温度进行建模进行训练，其中一个传感器以固定关系安装在炉中，第二传感器可定位在坩埚内用于训练和 调整坩埚温度曲线，使得放置样品的坩埚温度被建模，并且根据炉的动态热特性对能量施加到炉子的响应是已知的。 通过对坩埚内的温度分布进行建模，可以控制炉子，以提供更快，更准确的分析，并防止温度过高，因为所需的温度平台接近。

公开(公告)号：US20030148634A1

公开(公告)日：2003-08-07

申请号：US10357601

申请日：2003-02-04

申请人： Wacker Siltronic AG.

发明人： Robert Holzl ,  Christoph Seuring ,  Reinhold Wahlich ,  Wilfried Von Ammon

IPC分类号： C30B013/00 ,  H01L021/324 ,  H01L021/42 ,  H01L021/477

CPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/3225 ,  H01L21/324 ,  Y10T117/1088

摘要： A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequality 1 [ Oi ]

公开(公告)号：US20020158224A1

公开(公告)日：2002-10-31

申请号：US10014355

申请日：2001-12-14

发明人： Hiroshi Aoto ,  Akira Unno ,  Tetsuro Fukui ,  Akio Ikesue

IPC分类号： C30B001/00 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B030/04 ,  C30B028/10 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08 ,  H01F001/00 ,  C04B035/26 ,  C04B035/64

CPC分类号： C04B35/4684 ,  C30B1/00 ,  C30B29/32 ,  H01L41/1871 ,  H01L41/39

摘要： BaTiO3nullPbTiO3 series single crystal is single-crystallized by heating BaTiO3nullPbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3nullPbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

摘要翻译： BaTiO3-PbTiO3系单晶通过加热BaTiO3-PbTiO3致密粉末构件或具有比含Ba摩尔数更小的含Pb摩尔数的烧结构件，同时保持粉末或物质处于非熔融状态而单晶。 以这种方式，这种单晶可以更快地以晶体生长速度制造和稳定化，显着地有助于提高各种性能中优良的BaTiO3-PbTiO3系列单晶的介电损耗和机电耦合系数，以及 为了提供压电性能和生产率特别优异的铅含量比小的压电材料。

公开(公告)号：US20040255847A1

公开(公告)日：2004-12-23

申请号：US10465528

申请日：2003-06-19

申请人： MEMC Electronic Materials, Inc.

发明人： Carl F. Cherko ,  Robert D. Cook

IPC分类号： C30B035/00 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B15/00 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/106 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A fluid sealing system is provided for use in a crystal puller for growing a monocrystalline ingot. The crystal puller has a housing, a fluid flow path contained in the housing, and a fluid passage through a wall of the housing for passage of fluid. The fluid sealing system includes a fluid connector head adapted for connection to the fluid passage and to the fluid flow path to establish fluid communication between the fluid flow path and the outside of the housing. The head has a port adapted for fluid communication with the fluid passage through the wall of the housing. First and second seals around the port are adapted for sealing engagement with the head. A space is defined generally between the first and second seals, and a leak detector is arranged to monitor the space for detecting fluid leakage past at least one of the seals.

摘要翻译： 提供流体密封系统用于晶体拉出器中用于生长单晶锭。 晶体拉出器具有壳体，容纳在壳体中的流体流路，以及通过壳体的壁的流体通道，用于流体流通。 流体密封系统包括适于连接到流体通道和流体流动路径的流体连接器头，以在流体流动路径和壳体的外部之间建立流体连通。 头部具有适于与通过壳体的壁的流体通道流体连通的端口。 端口周围的第一和第二密封件适于与头部进行密封接合。 通常在第一和第二密封件之间限定空间，并且设置泄漏检测器以监测用于检测通过至少一个密封件的流体泄漏的空间。

公开(公告)号：US20040118335A1

公开(公告)日：2004-06-24

申请号：US10249892

申请日：2003-05-15

发明人： Mao-Yi Chang

IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B29/06 ,  C30B13/24

摘要： At least one amorphous silicon island is formed on a substrate first. A first step and a second step laser crystallization processes are thereafter performed in sequence. The amorphous silicon island is irradiated with a laser pulse having a first energy density to re-crystallize an edge portion of the amorphous silicon island into a polysilicon structure. The amorphous silicon island is then irradiated with a laser pulse having a second energy density to re-crystallize a center portion of the amorphous silicon island into a polysilicon structure.

摘要翻译： 首先在基板上形成至少一个非晶硅岛。 之后依次进行第一步骤和第二步骤的激光结晶处理。 用具有第一能量密度的激光脉冲照射非晶硅岛，以使非晶硅岛的边缘部分再结晶成多晶硅结构。 然后用具有第二能量密度的激光脉冲照射非晶硅岛，以将非晶硅岛的中心部分重新结晶成多晶硅结构。

公开(公告)号：US20030192470A1

公开(公告)日：2003-10-16

申请号：US10410812

申请日：2003-04-10

申请人： Wacker Siltronic AG

发明人： Rolf Knobel ,  Wilfried Von Ammon ,  Janis Virbulis ,  Manfred Grundner

IPC分类号： C30B021/04 ,  C30B028/08 ,  C30B013/00

CPC分类号： C30B29/06 ,  C30B13/10 ,  C30B13/26

摘要： A doped semiconductor wafer of float zone-pulled semiconductor material contains a dopant added to a molten material and has a radial macroscopic resistance distribution of less than 12% and striations of null10% to null10%. There is also a process for producing a doped semiconductor wafer by float zone pulling of a single crystal and dividing up the single crystal, in which process, during the float zone pulling, a molten material which is produced using an induction coil is doped with a dopant. It is exposed to at least one rotating magnetic field and is solidified. The single crystal which is formed during the solidification of the molten material is rotated. The single crystal and the magnetic field are rotated with opposite directions of rotation and the magnetic field has a frequency of 400 to 700 Hz.

摘要翻译： 浮动区域牵引半导体材料的掺杂半导体晶片包含添加到熔融材料中的掺杂剂，并且具有小于12％的径向宏观电阻分布和-10％至+ 10％的条纹。 还有一种用于通过浮选区域拉动单晶并分离单晶来制造掺杂半导体晶片的方法，在该过程中，在浮法区域拉伸期间，使用感应线圈产生的熔融材料掺杂有 掺杂剂。 暴露于至少一个旋转磁场并固化。 在熔融材料固化期间形成的单晶旋转。 单晶和磁场以相反的旋转方向旋转，磁场的频率为400至700Hz。

公开(公告)号：US20030150374A1

公开(公告)日：2003-08-14

申请号：US10220148

申请日：2003-01-08

发明人： Kenichi Sasatani ,  Naritoshi Kimura ,  Masakazu Ohnishi

IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08 ,  C01B033/02

CPC分类号： C30B29/06 ,  C30B11/001

摘要： The present invention reduces temperature gradient in the direction of the radius of solidified ingots of silicon immediately after solidification, which has serious influences on the quality as a solar cell and improves the quality. Silicon raw materials are melted inside a bottomless crucible 3 combined with an induction coil 2 by electromagnetic induction heating. The silicon melt 19 formed inside the bottomless crucible 3 is allowed to descend and solidified ingots of silicon 12 are manufactured continuously. Plasma heating by a transferred plasma arc torch 9 is also used for melting the silicon raw materials. The plasma arc torch 9 is moved for scanning along the inner surface of the bottomless crucible 3 in the horizontal direction. A plasma electrode on the solidified ingot side to generate transferred plasma arc is allowed to contact the surface of the solidified ingot at positions where the temperature of the solidified ingot becomes 500 to 900null C.

摘要翻译： 本发明在固化后立即降低了固化硅的半径方向的温度梯度，这对太阳能电池的质量有严重的影响，并提高了质量。 硅原料通过电磁感应加热与感应线圈2组合的无底坩埚3内熔化。 允许形成在无底坩埚3内的硅熔体19下降，连续制造硅12的固化锭。 通过转移的等离子弧焊炬9的等离子体加热也用于熔化硅原料。 沿着无底坩埚3的内表面沿水平方向移动等离子弧焊炬9进行扫描。 固化锭侧的等离子电极产生转移等离子体电弧，使固化锭的表面在固化锭的温度为500〜900℃的位置接触。

公开(公告)号：US20030145781A1

公开(公告)日：2003-08-07

申请号：US10350570

申请日：2003-01-24

申请人： WACKER SILTRONIC AG

发明人： Wilfried Von Ammon

IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B29/06 ,  C30B13/08 ,  C30B13/10 ,  C30B13/14 ,  C30B13/16 ,  C30B13/30 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068

摘要： A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.

摘要翻译： 一种制造半导体材料的单晶的方法，其中熔体的一部分通过拉线圈保持液态，在晶种上固化以形成生长的单晶，并且将颗粒熔化以保持生长 的单晶。 熔化的颗粒在延迟后通入熔体。 还有一种适用于进行该方法的装置，并且具有延迟熔融颗粒和熔体混合的装置。

公开(公告)号：US20030041797A1

公开(公告)日：2003-03-06

申请号：US10218457

申请日：2002-08-15

发明人： Mikio Geho

IPC分类号： C30B001/00 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B13/00 ,  C30B29/28

摘要： A feed rod for growing a magnetic single crystal having a composition represented by the formula (Y3-aAa)(Fe5-b-cBb)O12-null, wherein A is at least one element selected from the lanthanoide series, B is at least one element selected from the group consisting of Ga, Al, In, and Sc, c is a value for decreasing the Fe content from the stoichiometric amount, null is a value for decreasing the oxygen content to satisfy the chemically neutral condition, and the relationships 0nullanull0.5; 0nullbnull1.0; 0

摘要翻译： 用于生长具有由式（Y3-aAa）（Fe5-b-cBb）O12-α表示的组成的磁性单晶的进料棒，其中A是选自镧系元素，B中的至少一种元素，至少一种 选自Ga，Al，In和Sc的元素，c是用于从化学计量量减少Fe含量的值，α是用于降低氧含量以满足化学中性条件的值，并且关系0 <= a> = 0.5; 0 <= b> = 1.0; 0 = 0.15，0 <α。

公开(公告)号：US20030000455A1

公开(公告)日：2003-01-02

申请号：US09894940

申请日：2001-06-28

发明人： Apostolos Voutsas

IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B1/023 ,  C30B29/06 ,  Y10S117/903

摘要： A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.