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1.发明授权公开(公告)号：US07470170B2
公开(公告)日：2008-12-30
申请号：US10590067
申请日：2005-02-22
申请人： Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyuki Nakai , Masahiko Nakamori , Takatoshi Yamada
发明人： Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyuki Nakai , Masahiko Nakamori , Takatoshi Yamada
IPC分类号： B24B1/00
摘要： The present invention provides a polishing pad which imparts excellent planarity and uniformity thereof to a material to be polished, such as a semiconductor wafer, without forming scratches. The present invention relates to a semiconductor wafer polishing pad comprising a polishing layer and a cushion layer, wherein the polishing layer is formed from foamed polyurethane, has a flexural modulus of 250 to 350 MPa, the cushion layer is formed from closed-cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm/(gf/cm2).
摘要翻译： 本发明提供了一种抛光垫，其对诸如半导体晶片的待抛光材料赋予优异的平面度和均匀性，而不会形成划痕。 本发明涉及一种包括抛光层和缓冲层的半导体晶片抛光垫，其中抛光层由发泡聚氨酯形成，其弯曲模量为250至350MPa，缓冲层由闭孔泡沫形成， 厚度为0.5〜1.0mm，应变常数为0.01〜0.08μm/（gf / cm 2）。
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2.发明申请公开(公告)号：US20070178812A1
公开(公告)日：2007-08-02
申请号：US10590067
申请日：2005-02-22
申请人： Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyukii Nakai , Masahiko Nakamori , Takatoshi Yamada
发明人： Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyukii Nakai , Masahiko Nakamori , Takatoshi Yamada
IPC分类号： B24B7/30
摘要： The present invention provides a polishing pad which imparts excellent planarity and uniformity thereof to a material to be polished, such as a semiconductor wafer, without forming scratches. The present invention relates to a semiconductor wafer polishing pad comprising a polishing layer and a cushion layer, wherein the polishing layer is formed from foamed polyurethane, has a flexural modulus of 250 to 350 MPa, the cushion layer is formed from closed-cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm/(gf/cm2).
摘要翻译： 本发明提供了一种抛光垫，其对诸如半导体晶片的待抛光材料赋予优异的平面度和均匀性，而不会形成划痕。 本发明涉及一种包括抛光层和缓冲层的半导体晶片抛光垫，其中抛光层由发泡聚氨酯形成，其弯曲模量为250至350MPa，缓冲层由闭孔泡沫形成， 厚度为0.5〜1.0mm，应变常数为0.01〜0.08μm/（gf / cm 2）以下。
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公开(公告)号：US2418250A
公开(公告)日：1947-04-01
申请号：US60267445
申请日：1945-06-30
申请人： US RUBBER CO
发明人： DRAKE CHARLES E
IPC分类号： B24D3/24
CPC分类号： B24D3/24
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公开(公告)号：US06450863B2
公开(公告)日：2002-09-17
申请号：US09748953
申请日：2000-12-26
申请人： Stephen J. Kramer , Scott Meikle
发明人： Stephen J. Kramer , Scott Meikle
IPC分类号： B24B100
CPC分类号： B24B37/24 , B24B37/26 , B24D3/24 , H01L21/31053 , Y10S977/777 , Y10S977/883 , Y10S977/888
摘要： A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.
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公开(公告)号：US20020111124A1
公开(公告)日：2002-08-15
申请号：US10121830
申请日：2002-04-11
发明人： Stephen J. Kramer , Scott Meikle
IPC分类号： B24B001/00 , B24B029/00
CPC分类号： B24B37/24 , B24B37/26 , B24D3/24 , H01L21/31053 , Y10S977/777 , Y10S977/883 , Y10S977/888
摘要： A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.
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公开(公告)号：US20010000772A1
公开(公告)日：2001-05-03
申请号：US09748953
申请日：2000-12-26
发明人： Stephen J. Kramer , Scott Meikle
IPC分类号： B24B001/00 , B24B007/19 , B24B007/30
CPC分类号： B24B37/24 , B24B37/26 , B24D3/24 , H01L21/31053 , Y10S977/777 , Y10S977/883 , Y10S977/888
摘要： A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.
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公开(公告)号：US1977748A
公开(公告)日：1934-10-23
申请号：US50903531
申请日：1931-01-15
申请人： NORTON CO
发明人： WEBSTER DUANE E
IPC分类号： B24D3/24
CPC分类号： B24D3/24 , Y10S524/925
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