知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

25 records (took 0.021 seconds)

    IRON CATALYZED HYDROCHLORINATION OF SILICON TETRACHLORIDE TO TRICHLOROSILANE
    1.
    发明申请
    IRON CATALYZED HYDROCHLORINATION OF SILICON TETRACHLORIDE TO TRICHLOROSILANE 有权

    公开(公告)号：US20210291133A1

    公开(公告)日：2021-09-23

    申请号：US17209835

    申请日：2021-03-23

    Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)

    Inventor： Matthias A. Colomb ,  Bryan H. Nettles

    IPC: B01J8/18 ,  C01B33/107

    Abstract: In the hydrochlorination reaction, silicon tetrachloride (STC), metallurgical silicon, and hydrogen are converted to trichlorosilane (TCS) at about 540° C. Previously, a pilot-scale reactor was used to study the yield of TCS produced by the hydrochlorination reaction. The yield observed by experimentation compared favorably with a scalable mathematical model developed to predict the rate of TCS conversion. The model predicted that 90% of the final amount of TCS produced was achieved after the reactant gas traveled a quarter of the vertical distance in the reaction section of the reactor. The pilot-scale reactor was shortened to verify the model predictions. In addition, some catalytic effects on the reaction were studied.

    METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES
    3.
    发明申请
    METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES 审中-公开
    用减少硼硼化合物生产三氯硅烷的方法

    公开(公告)号：US20130121908A1

    公开(公告)日：2013-05-16

    申请号：US13729882

    申请日：2012-12-28

    Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) ,  MITSUBISHI MATERIALS CORPORATION

    Inventor： Takeshi Kamei ,  Laura Prine ,  Takamasa Yasukawa ,  Yasuhiro Oda

    IPC: C01B33/107

    CPC classification number: C01B33/10763 ,  C01B35/02 ,  C01B35/026

    Abstract: The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.

    Abstract translation: 本发明涉及一种具有减少硼化合物量的三氯硅烷的制备方法。 该方法包括：（A）在流化床反应器中使冶金级硅与氯化氢反应，生成包含三氯硅烷的反应气体; （B）首先蒸馏反应气体，用于分离第一蒸气馏分和第一残余馏分，将蒸馏塔顶部的蒸馏温度设定在约三氯硅烷的沸点和约四氯硅烷的沸点之间，并将第一蒸气 馏分至第二蒸馏塔; （C）通过将蒸馏塔顶部的蒸馏温度设定在约二氯硅烷的沸点和约三氯硅烷的沸点之间，对三氯硅烷和包括硼化合物的第二蒸气馏分进行第二次蒸馏; 和（D）将第二蒸气馏分反馈到流化床反应器。

    FZ seed holder and pre-heater
    6.
    发明授权
    FZ seed holder and pre-heater 有权
    FZ种子架和预热器

    公开(公告)号：US09410263B2

    公开(公告)日：2016-08-09

    申请号：US13837047

    申请日：2013-03-15

    Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) ,  MITSUBISHI MATERIALS CORPORATION

    Inventor： Brian P. Smith ,  Christopher Cook

    IPC: C30B13/00 ,  C30B13/28

    CPC classification number: C30B13/285 ,  Y10S117/911 ,  Y10T117/1076

    Abstract: The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips.

    Abstract translation: 根据本发明的装置是用于保持单晶硅种子的装置。 装置或保持器包含多个条以将晶种夹持在晶种保持器中; 以及支撑多个条的基座。 多个条带各自具有接触单晶硅晶种的自由端和与连接基底并与之成一体的自由端相反的端部。 多个条带被弯曲或折叠，使得当晶种插入多个条带中时，它们对晶种施加压力。

    MECHANICAL SEED COUPLING
    7.
    发明申请
    MECHANICAL SEED COUPLING 有权
    机械连接

    公开(公告)号：US20140270933A1

    公开(公告)日：2014-09-18

    申请号：US13838392

    申请日：2013-03-15

    Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) ,  MITSUBISHI MATERIALS CORPORATION

    Inventor： Joseph Lovorn ,  Larry Gurley

    IPC: F16B7/00 ,  B28D1/14

    CPC classification number: F16B7/0426 ,  B28D5/021 ,  F16B2200/10 ,  Y10T403/5733 ,  Y10T403/74

    Abstract: The present invention relates to an apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts.

    Abstract translation: 本发明涉及一种制造硅籽晶棒的装置和方法，其中两个硅晶种通过机械耦合连接在一个长硅籽晶棒中。 机械种子耦合器是具有外壁，具有上孔的上表面，具有下孔的下表面和围绕内空间的内壁的主体。 机械种子联可以是圆筒状，椭圆管状，矩形管状，方筒状等形状。 此外，机械种子耦合器可以是由一个固体材料制成的单一结构，或者它可以由子部分组成。

    FZ SEED HOLDER AND PRE-HEATER
    8.
    发明申请
    FZ SEED HOLDER AND PRE-HEATER 有权
    FZ种子保持器和预热器

    公开(公告)号：US20140261160A1

    公开(公告)日：2014-09-18

    申请号：US13837047

    申请日：2013-03-15

    Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) ,  MITSUBISHI MATERIALS CORPORATION

    Inventor： Brian P. Smith ,  Christopher Cook

    IPC: C30B13/00 ,  C30B13/32 ,  C30B13/20

    CPC classification number: C30B13/285 ,  Y10S117/911 ,  Y10T117/1076

    Abstract: The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips.

    Abstract translation: 根据本发明的装置是用于保持单晶硅种子的装置。 装置或保持器包含多个条以将晶种夹持在晶种保持器中; 以及支撑多个条的基座。 多个条带各自具有接触单晶硅晶种的自由端和与连接基底并与之成一体的自由端相反的端部。 多个条带被弯曲或折叠，使得当晶种插入多个条带中时，它们对晶种施加压力。

    Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas
    10.
    发明授权
    Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas 有权
    通过用惰性气体排放系统来生产具有减少量的硼化合物的多晶硅的装置和方法

    公开(公告)号：US08518352B2

    公开(公告)日：2013-08-27

    申请号：US13531672

    申请日：2012-06-25

    Applicant: Takeshi Kamei ,  Mamoru Nakano

    Inventor： Takeshi Kamei ,  Mamoru Nakano

    IPC: B01J8/04 ,  B01J8/18

    CPC classification number: C01B33/035 ,  B01J8/18 ,  B01J2219/00006

    Abstract: The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.

    Abstract translation: 本发明涉及一种制造具有减少量的硼化合物的多晶硅的装置和方法。 本发明将三氯硅烷（TCS）罐和一系列蒸馏装置连接在三氯硅烷管线中的Ar气进料。 蒸馏单元具有压力传感器和压力独立控制阀（PIC-V），其位于排气管线上，用于从蒸馏单元排出排出气体。 Ar气体以比为打开PIC-V设定的压力高的压力供给TCS管路。 TCS由蒸馏单元蒸馏，从蒸馏单元连续排出排放气体。

Patent Agency Ranking