公开(公告)号：US10797690B2

公开(公告)日：2020-10-06

申请号：US16590262

申请日：2019-10-01

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H01L27/12 ,  H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US10790815B2

公开(公告)日：2020-09-29

申请号：US16673411

申请日：2019-11-04

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H01L27/12 ,  H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20200036378A1

公开(公告)日：2020-01-30

申请号：US16590292

申请日：2019-10-01

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H03K17/16 ,  H01L29/06 ,  H03K17/687 ,  H01L29/10 ,  H01L29/786

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20210194478A1

公开(公告)日：2021-06-24

申请号：US16987265

申请日：2020-08-06

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US10797691B1

公开(公告)日：2020-10-06

申请号：US16853688

申请日：2020-04-20

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H01L27/12 ,  H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H03K17/687 ,  H01L29/10

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US10630286B2

公开(公告)日：2020-04-21

申请号：US16377114

申请日：2019-04-05

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Mark L. Burgener ,  Robert B. Welstand

IPC: H01L27/12 ,  H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20200067504A1

公开(公告)日：2020-02-27

申请号：US16671967

申请日：2019-11-01

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H03K17/16 ,  H01L29/10 ,  H01L29/786 ,  H01L29/06 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20190089348A1

公开(公告)日：2019-03-21

申请号：US16054959

申请日：2018-08-03

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Mark L. Burgener

IPC: H03K17/16 ,  H01L29/10 ,  H01L29/06 ,  H01L29/786 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US10790814B2

公开(公告)日：2020-09-29

申请号：US16671967

申请日：2019-11-01

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H01L21/02 ,  H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US10784855B2

公开(公告)日：2020-09-22

申请号：US16590292

申请日：2019-10-01

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H01L27/12 ,  H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.